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MIO 600-65E11
IGBT Module
Single switch
Short Circuit SOA Capability Square RBSOA
C C'
3 5
IC80 = 600 A = 6500 V VCES VCE(sat) typ = 4.2 V
C
7
C
9
G
2
E'
1
E
4
E
6
E
8
IGBT Symbol VCES VGES IC85 ICM tSC TC = 85C tp = 1 ms; TC = 85C VCC = 4400 V; VCEM CHIP = < 6500 V; VGE < 15 V; TVJ < 125C Conditions Conditions VGE = 0 V Maximum Ratings 6500 20 600 1200 10 V V A A s
Features * NPT IGBT - Low-loss - Smooth switching waveforms for good EMC * Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications * AC power converters for - industrial drives - windmills - traction * LASER pulse generator
Symbol
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 4.2 5.4 6 8 V V V
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coes C res Qge RthJC
IC = 600 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 240 mA; VCE = VGE VCE = 6500 V; VGE = 0 V; TVJ = 125C VCE = 0 V; VGE = 20 V; TVJ = 125C RG = 3.9 RG = 3.9 Inductive load; TVJ = 125C; R = 2.7 G VGE = 15 V; VCC = 3600 V; R = 2.7 G IC = 600 A; L = 280 nH RG = 3.9 RG = 2.7 VCE = 25 V; VGE = 0 V; f = 1 MHz IC = 600 A; VCE = 3600 V; VGE = 15 V
120 mA 500 nA 620 270 1500 930 4250 3250 150 7.57 1.46 9.65 ns ns ns ns mJ mJ nF nF nF C 0.011 K/W
Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions.
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(c) 2005 IXYS All rights reserved
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MIO 600-65E11
Diode Symbol IF80 IFSM Conditions TC = 80C VR = 0 V; TVJ = 125C; tp = 10 ms; half-sinewave Maximum Ratings 600 6000 A A
Symbol VF IRM trr QRR Erec RthJC
Conditions IF = 600 A; TVJ = 25C TVJ = 125C
Characteristic Values min. typ. max. 3.2 3.4 930 2200 1150 2100 V V A ns C mJ 0.021 K/W
VCC = 3600 V; IC = 600 A; VGE = 15 V; RG = 3.9 ; TVJ = 125C Inductive load; L = 280 nH
Forward voltage is given at chip level
Symbol TJM TVJ Tstg VISOL Md
Conditions max junction temperature Operatingtemperature Storage temperature 50 Hz, 1 min Mounting torque Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws
Maximum Ratings +125 -40...+125 -40...+125 10200 C C C V~
4 - 6 Nm 8 - 10 Nm 2 - 3 Nm
Symbol dA dS VE CTI L Rterm-chip * RthCH Weight
Conditions Clearance distance terminal to base IEC 60664-1 / EN 50124-1 terminal to terminal Surface creepage dist. terminal to base IEC 60664-1 / EN 50124-1 terminal to terminal Partial discharge extinction voltage f = 50 Hz, QPD 10pC (IEC 61287) Comperative tracking index Module stray inductance, C to E terminal Resistance terminal to chip per module; grease = 1 W/m*K
Characteristic Values min. typ. max. 40 26 64 56 5100 600 18 0.12 0.006 1760 nH m K/W g mm mm mm mm V
(c) 2005 IXYS All rights reserved
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MIO 600-65E11
1200
1200 17V
1000 17V 800 15V
IC [A]
1000
15V 13V
800
11V
IC [A]
13V 600 11V
600
400
400 9V
200
9V Tvj = 25 C
200 Tvj = 125 C 0
0 0 1 2 3 4 VCE [V] 5 6 7 8
0
1
2
3
4
5 VCE [V]
6
7
8
9
10
Fig. 1 Typical output characteristics, chip level
1200
Fig. 2 Typical output characteristics, chip level
1200 VCE = 20 V
1000 25 C 800 125 C IC [A] 600
1000
800
IC [A]
600
400
400 125 C
25 C
200
VGE = 15V
200
0 0 1 2 3 4 VCE [V] 5 6 7 8
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V]
Fig. 3
20
Typical on-state characteristics, chip level
1000
Fig. 4
Typical transfer characteristics, chip level
VGE = 0V fOSC = 1 MHz VOSC = 50 mV VCC = 3600 V 15
100
Cies
VCC = 4400 V VGE [V] 10
C [nF]
Coes
10
5 Cres IC = 600 A Tvj = 25 C 0 0 1 2 3 4 5 Qg [C] 6 7 8 9
1 0 5 10 15 20 VCE [V] 25 30 35
(c) 2005 IXYS All rights reserved
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Fig. 5 Typical gate charge characteristics
Fig. 6 Typical capacitances vs collector-emitter voltage
MIO 600-65E11
12 VCC = 3600V RGon = 3.9 ohm RGoff = 2.7 ohm VGE = 15V Tvj = 125 C Ls = 280 nH
Eon, Eoff [J]
20 18 16 14 12 10 8 6 4 Eoff Eon VCC = 3600 V IC = 600A VGE = 15 V Tvj = 125 C L = 280 nH
10
8 Eon, Eoff [J]
6
Eon
4
Eoff
2
2
E sw [J] = 4.5 x 10
-6
x I C + 8.6 x 10
2
-3
x I C + 0.61
0 0 300 600 IC [A] 900 1200
0 0 10 20 RG [ohm] 30 40
Fig. 7 Typical switching energies per pulse versus collector current
10 VCC = 3600 V RGon = 3.9 ohm RGoff = 2.7 ohm VGE = 15 V Tvj = 125 C L = 280 nH td(on), tr, td(off), tf [s] 10
Fig. 8 Typical switching energies per pulse versus gate resistor
td(off)
td(on)
td(off) td(on) tr, td(off), tf [s]
1 tf td(on)
1
tr
tf VCC = 3600 V IC = 600 A VGE = 15 V Tvj = 125 C L = 280 nH 0.1
tr 0.1 0 300 600 IC [A] 900 1200
0
10
20 RG [ohm]
30
40
Fig. 9 Typical switching times vs. collector current
2.5 VCC 4400 V, Tvj = 125 C, VGE = 15 V RGoff = 2.7 ohm, L 280 nH
Fig. 10
1200
Typical switching times vs. gate resistor
1000 2 800 1.5 ICpulse / IC IF [A] 600 25 C 125 C
1
400
0.5 Chip Module 0 0 1000 2000 3000 4000 VCE [V] 5000 6000 7000
200
0 0 1 2 VF [V] 3 4 5
(c) 2005 IXYS All rights reserved
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Fig. 14 Typical diode forward characteristics, chip level
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Fig. 11 Turn-off safe operating area (RBSOA)
Fig. 12 Typ. diode forward characteristics, chip level
MIO 600-65E11
3000 VCC = 3600 V RG = 3.9 ohm Tvj = 125 C L = 280 nH
2500 1200
RG = 2.2 ohm
Erec
2000
RG = 2.7 ohm
2500
Qrr
1000
Erec [mJ], Qrr [C], Irr [A]
2000
RG = 3.9 ohm
800 Qrr [C], Irr [A]
1500
Qrr 1500
RG = 5.6 ohm
Erec [mJ]
1000
1000 Irr
Erec
RG = 15 ohm
RG = 8.2 ohm
600
400 VCC = 3600 V IF = 600 A Tvj = 125 C L = 280 nH 2 3 4
Irr
500
E rec [mJ] = -1.8 x 10
-3
500
2
RG = 27 ohm
200
x I F + 3.93 x I F + 403
0 0 300 600 IF [A] 900 1200
0 0 1 di/dt [kA/s]
0
Fig. 13 Typ. reverse recovery characteristics versus forward current
1400 VCC 4400 V di/dt 4000 A/s Tvj = 125 C L 280 nH Zth(j-h) [K/W] IGBT, DIODE 0.1
Fig. 14 Typ. reverse recovery characteristics versus di/dt
1200
Zth(j-c) Diode 0.01 Zth(j-c) IGBT
1000
800 IR [A] 600
400
0.001
200
0 0 1000 2000 3000 4000 5000 VR [V] 6000 7000 0.0001 0.001 0.01 0.1 t [s] 1 10
Fig. 15 Safe operating area diode (SOA)
Fig. 16 Thermal impedance vs. time
n
Z th (j-c) (t) = R i (1 - e -t/ i )
i =1
Outline drawing
i IGBT DIODE Ri [K/kW] ti [ms] Ri [K/kW] ti [ms] 1 8.5 151 17 144 2 2 5.84 4.2 5.83
(c) 2005 IXYS All rights reserved
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